Product Summary
(4) Vorwarts- und Ruckwarts-Sperrstrom forward off-state and reverse current Tvj = Tvj max vD = VDRM, vR = VRRM iD, iR: max. 50 mA; (5) Zundverzug gate controlled delay time DIN IEC 747-6 Tvj = 25 ℃,iGM = 1 A, diG/dt = 1 A/μs tgd: max. 3 μs.
Parametrics
TD250N14KOF absolute maximum ratings: (1)Dauergrenzstrom average on-state current TC = 85℃, TC = 82℃ ITAVM: 250, 261A; (2)Stobstrom-Grenzwert surge current Tvj = 25 ℃, tP = 10 ms, Tvj = Tvj max, tP = 10 ms ITSM: 8000 7000A; (3)Grenzlastintegral I2t-value Tvj = 25 ℃, tP = 10 ms, Tvj = Tvj max, tP = 10 ms I2t: 320000, 245000A2s; (4)Kritische Stromsteilheit critical rate of rise of on state current DIN IEC 747-6 f = 50 Hz, iGM = 1 A, diG/dt = 1 A/μs(diT/dt)cr: 150 A/μs.
Features
TD250N14KOF features: (1) Nicht zundende Steuerspannung gate non-trigger voltage Tvj = Tvj max , vD = 0,5 VDRM VGD: max. 0,2 V; (2) Haltestrom holding current Tvj = 25℃, vD = 6 V, RA = 5 Ω IH: max. 300 mA; (3) Einraststrom latching current Tvj = 25℃, vD = 6 V, RGK . 10 Ω iGM = 1 A, diG/dt = 1 A/μs, tg = 20 μs IL: max. 1200 mA;
Diagrams
<IMG alt=" TD250N14KOF dimension" src="http://www.seekic.com/uploadfile/ic-mfg/201212325231875.jpg" border=0>
Image | Part No | Mfg | Description | Pricing (USD) |
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TD250N14KOF |
Infineon Technologies |
Discrete Semiconductor Modules 1400V 410A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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TD250N |
Other |
Data Sheet |
Negotiable |
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TD250N08KOF |
Infineon Technologies |
SCR Modules PHASE CONTROL THYRISTOR MODULE |
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TD250N12KOF |
Infineon Technologies |
Discrete Semiconductor Modules 1200V 410A |
Data Sheet |
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TD250N14/20KOF |
Infineon Technologies |
Discrete Semiconductor Modules 1400/2000V 410A |
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TD250N14KOF |
Infineon Technologies |
Discrete Semiconductor Modules 1400V 410A |
Data Sheet |
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TD250N16/25KOF |
Infineon Technologies |
Discrete Semiconductor Modules 1600/2500V 410A |
Data Sheet |
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