(China (Mainland))
Product Summary
FP75R12KT3
Parametrics
Absolute maximum ratings: (1)collector-emitter voltage, Tvj=25℃, Vces: 1200V; (2)DC-collector current, Tc=80℃, Ic nom: 75A; (3)DC-collector current, Tc=25℃, Ic: 105A; (4)Repetive peak collector current, Tp=1ms, Tc=80℃, Icrm: 150A; (5)total power dissipation, Tc=25℃, Ptot:355W; (6)gate emitter peak voltage, Vges: ±20V.
Features
Features: (1)with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode; (2)collector-emitter saturation voltage: 1.90V; (3)gate threshold: 5.0 to 6.5V; (4)gate charge: 0.70μC; (5)internal gate resistor: 10Ω.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FP75R12KT3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 105A |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||||||||
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FP750SOT343 |
Other |
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Data Sheet |
Negotiable |
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FP75R06KE3 |
Infineon Technologies |
IGBT Modules IGBT-MODULE |
Data Sheet |
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FP75R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 75A PIM |
Data Sheet |
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FP75R12KT3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 105A |
Data Sheet |
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FP75R12KT4 |
Infineon Technologies |
Discrete Semiconductor Modules 1.85V IGBT 4 PIM |
Data Sheet |
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FP75R12KT4_B11 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 75A |
Data Sheet |
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